SeungJae Jo : rechercher sur Z-Library

Année:

2009

Langue:

english

Fichier:

PDF, 411 KB

english, 2009

Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing

Man Chang, Musarrat Hasan, Seungjae Jung, Hokyung Park, Minseok Jo, Hyejung Choi, Moonjae Kwon, Hyunsang Hwang, Sangmoo Choi

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 314 KB

english, 2007

Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels

Seonghyun Kim, Minseok Jo, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Man Chang, Chunhum Cho, Hyunsang Hwang

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 534 KB

english, 2011

Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament

Jubong Park, Minseok Jo, Joonmyoung Lee, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang

Journal:

physica status solidi (a)

Année:

2011

Langue:

english

Fichier:

PDF, 670 KB

english, 2011

Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature

Wootae Lee, Minseok Jo, Jubong Park, Joonmyoung Lee, Sangsu Park, Seonghyun Kim, Seungjae Jung, Jungho Shin, Daeseok Lee, Manzar Siddik, Hyunsang Hwang

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 278 KB

english, 2011

Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Sangsu Park, Seungjae Jung, Manzar Siddik, Minseok Jo, Joonmyoung Lee, Jubong Park, Wootae Lee, Seonghyun Kim, Sharif Md. Sadaf, Xinjun Liu, Hyunsang Hwang

Journal:

physica status solidi (RRL) - Rapid Research Letters

Année:

2011

Langue:

english

Fichier:

PDF, 357 KB

english, 2011

Cover Picture: Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer (Phys. Status Solidi RRL 10–11/2011)

Sangsu Park, Seungjae Jung, Manzar Siddik, Minseok Jo, Joonmyoung Lee, Jubong Park, Wootae Lee, Seonghyun Kim, Sharif Md. Sadaf, Xinjun Liu, Hyunsang Hwang

Journal:

physica status solidi (RRL) - Rapid Research Letters

Année:

2011

Fichier:

PDF, 535 KB

2011

Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications

Park, Sangsu, Jung, Seungjae, Siddik, Manzar, Jo, Minseok, Park, Jubong, Kim, Seonghyun, Lee, Wootae, Shin, Jungho, Lee, Daeseok, Choi, Godeuni, Woo, Jiyong, Cha, Euijun, Lee, Byoung Hun, Hwang, Hyuns

Journal:

physica status solidi (RRL) - Rapid Research Letters

Année:

2012

Langue:

english

Fichier:

PDF, 405 KB

english, 2012

Effect of ZrO[sub x]/HfO[sub x] bilayer structure on switching uniformity and reliability in nonvolatile memory applications

Lee, Joonmyoung, Bourim, El Mostafa, Lee, Wootae, Park, Jubong, Jo, Minseok, Jung, Seungjae, Shin, Jungho, Hwang, Hyunsang

Journal:

Journal of Applied Physics

Année:

2010

Langue:

english

Fichier:

PDF, 746 KB

english, 2010

TiO[sub 2]-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

Shin, Jungho, Kim, Insung, Biju, Kuyyadi P., Jo, Minseok, Park, Jubong, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2011

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

Seo, Kyungah, Kim, Insung, Jung, Seungjae, Jo, Minseok, Park, Sangsu, Park, Jubong, Shin, Jungho, Biju, Kuyyadi P, Kong, Jaemin, Lee, Kwanghee, Lee, Byounghun, Hwang, Hyunsang

Journal:

Nanotechnology

Année:

2011

Langue:

english

Fichier:

PDF, 944 KB

english, 2011

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications

Lee, Joonmyoung, Jungho Shin,, Daeseok Lee,, Lee, Wootae, Jung, Seungjae, Jo, Minseok, Park, Jubong, Biju, Kuyyadi P., Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang

Année:

2010

Langue:

english

Fichier:

PDF, 1.31 MB

english, 2010

[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Novel cross-point resistive switching memory with self-formed schottky barrier

Jo, Minseok, Seong, Dong-jun, Kim, Seonghyun, Lee, Joonmyoung, Lee, Wootae, Park, Ju-Bong, Park, Sangsoo, Jung, Seungjae, Shin, Jungho, Lee, Daeseok, Hwang, Hyunsang

Année:

2010

Langue:

english

Fichier:

PDF, 605 KB

english, 2010

New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory

Park, Jubong, Jo, Minseok, Jung, Seungjae, Lee, Joonmyoung, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Hwang, Hyunsang

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 441 KB

english, 2011

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Resistive switching characteristics of solution-processible TiOx using nano-scale via-hole structures

Seungjae Jung,, Tae-Wook Kim,, Hyejung Choi,, Jaemin Kong,, Ju-Bong Park,, Minseok Jo,, Seonghyun Kim,, Wootae Lee,, Joonmyoung Lee,, Takhee Lee,, Kwanghee Lee,, Hyunsang Hwang,

Année:

2009

Langue:

english

Fichier:

PDF, 271 KB

english, 2009

Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High-$k$ MOSFETs

Minseok Jo,, Seonghyun Kim,, Seungjae Jung,, Ju-Bong Park,, Joonmyoung Lee,, Hyung-Suk Jung,, Choi, R., Hyunsang Hwang,

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 410 KB

english, 2010

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications

Dong-jun Seong,, Park, Jubong, Nodo Lee,, Musarrat Hasan,, Seungjae Jung,, Hyejung Choi,, Joonmyoung Lee,, Minseok Jo,, Wootae Lee,, Park, Sangsu, Seonghyun Kim,, Yun Hee Jang,, Lee, Y., Sun

Année:

2009

Langue:

english

Fichier:

PDF, 1.19 MB

english, 2009

Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices

Chang, Man, Hasan, Musarrat, Jung, Seungjae, Park, Hokyung, Jo, Minseok, Choi, Hyejung, Hwang, Hyunsang

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 795 KB

english, 2007

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Charge loss behavior of manos-type flash memory cell with different levels of charge injection

Chang, Man, Jo, Minseok, Hasan, Musarrat, Kim, Seonghyun, Ju, Yongkyu, Jung, Seungjae, Choi, Hyejung, Hwang, Hyunsang

Année:

2009

Langue:

english

Fichier:

PDF, 499 KB

english, 2009

Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO[sub 3]: Evidence for the origins of enhanced memory performance

Jung, Seungjae, Choi, Hyejung, Ju, Yongkyu, Chang, Man, Jo, Minseok, Lee, Joonmyoung, Yoon, Jaesik, Lee, Choongman, Hwang, Hyunsang

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 590 KB

english, 2009

Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant

Jo, Minseok, Kim, Seonghyun, Lee, Joonmyoung, Jung, Seungjae, Park, Ju-Bong, Jung, Hyung-Suk, Choi, Rino, Hwang, Hyunsang

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 542 KB

english, 2010

Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection

Chang, Man, Jo, Minseok, Kim, Seonghyun, Ju, Yongkyu, Jung, Seungjae, Lee, Joonmyoung, Yoon, Jaesik, Hwang, Hyunsang, Lee, Choongman

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 692 KB

english, 2008

Impact of oxygen incorporation at the Si[sub 3]N[sub 4]∕Al[sub 2]O[sub 3] interface on retention characteristics for nonvolatile memory applications

Chang, Man, Ju, Yongkyu, Lee, Joonmyoung, Jung, Seungjae, Choi, Hyejung, Jo, Minseok, Jeon, Sanghun, Hwang, Hyunsang

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 643 KB

english, 2008

Transient charge trapping and detrapping properties of a thick SiO[sub 2]/Al[sub 2]O[sub 3] stack studied by short single pulse I[sub d]-V[sub g]

Chang, Man, Jo, Minseok, Jung, Seungjae, Lee, Joonmyoung, Jeon, Sanghun, Hwang, Hyunsang

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 734 KB

english, 2009

Nonvolatile resistive switching in Pr[sub 0.7]Ca[sub 0.3]MnO[sub 3] devices using multilayer graphene electrodes

Lee, Wootae, Jo, Gunho, Lee, Sangchul, Park, Jubong, Jo, Minseok, Lee, Joonmyoung, Jung, Seungjae, Kim, Seonghyun, Shin, Jungho, Park, Sangsu, Lee, Takhee, Hwang, Hyunsang

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 728 KB

english, 2011

Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics

Seonghyun Kim,, Biju, K P, Minseok Jo,, Seungjae Jung,, Jubong Park,, Joonmyoung Lee,, Wootae Lee,, Jungho Shin,, Sangsu Park,, Hyunsang Hwang,

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 364 KB

english, 2011

Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET

Minseok Jo,, Man Chang,, Seonghyun Kim,, Seungjae Jung,, Ju-Bong Park,, Joonmyoung Lee,, Dong-Jun Seong,, Hyunsang Hwang,

Journal: